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NTZD3155C
Thermal Resistance Ratings
Parameter
Junction ? to ? Ambient – Steady State (Note 2)
Junction ? to ? Ambient – t = 5 s (Note 2)
Symbol
R q JA
Max
500
447
Unit
° C/W
2. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise specified)
Parameter
Symbol
N/P
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
V (BR)DSS
N
V GS = 0 V
I D = 250 m A
20
V
P
I D = ? 250 m A
? 20
Drain ? to ? Source Breakdown Voltage
Temperature Coefficient
V( BR)DSS /T J
18
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
N
V GS = 0 V, V DS = 16 V
T J = 25 ° C
1.0
m A
P
V GS = 0 V, V DS = ? 16 V
? 1.0
N
P
V GS = 0 V, V DS = 16 V
V GS = 0 V, V DS = ? 16V
T J = 125 ° C
2.0
? 5.0
m A
Gate ? to ? Source Leakage Current
I GSS
P
V DS = 0 V, V GS = ± 4.5 V
$ 2.0
m A
ON CHARACTERISTICS (Note 3)
N
$ 5.0
Gate Threshold Voltage
V GS(TH)
N
V GS = V DS
I D = 250 m A
0.45
1.0
V
P
I D = ? 250 m A
? 0.45
? 1.0
Gate Threshold
Temperature Coefficient
V GS(TH) /T J
? 1.9
? mV/ ° C
Drain ? to ? Source On Resistance
R DS(on)
N
P
N
P
N
P
V GS = 4.5 V, I D = 540 mA
V GS = ? 4.5V, I D = ? 430 mA
V GS = 2.5 V, I D = 500 mA
V GS = ? 2.5V, I D = ? 300 mA
V GS = 1.8 V, I D = 350 mA
V GS = ? 1.8V, I D = ? 150 mA
0.4
0.5
0.5
0.6
0.7
1.0
0.55
0.9
0.7
1.2
0.9
2.0
W
Forward Transconductance
g FS
N
P
V DS = 10 V, I D = 540 mA
V DS = ? 10 V, I D = ? 430 mA
1.0
1.0
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C ISS
80
150
Output Capacitance
Reverse Transfer Capacitance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C OSS
C RSS
C ISS
C OSS
C RSS
N
P
f = 1 MHz, V GS = 0 V
V DS = 16 V
f = 1 MHz, V GS = 0 V
V DS = ? 16 V
13
10
105
15
10
25
20
175
30
20
pF
3. Pulse Test: pulse width v 300 m s, duty cycle v 2%
http://onsemi.com
2
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